PART |
Description |
Maker |
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位)8K的refresh/4k刷新
|
Hitachi,Ltd. Hitachi Semiconductor
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
BL8581A |
PWM or Singl-Wire Dimming, 4-Channels WLED Linear Driver
|
SHANGHAI BELLING CO., LTD.
|
MX29LV640TXBI-90 MX29LV640TXBI-12 MX29LV640BXBI-12 |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA63 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
MB82DP04184E-65LTBG MB82DP04184E-65L |
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
23C6410 MX23C6410 MX23C6410MC-10 MX23C6410MC-12 MX |
64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
IS42S16400C |
64M-Bit x 16-Bit 4 4-Bank SDRAM
|
ISSI
|
MBM29LV650UE-90 MBM29LV651UE90TR 29LV650 MBM29LV65 |
64M (4M x 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|